stP12PF06 p - channel 60v - 0.18 w - 12a to-220 stripfet ? power mosfet n typical r ds(on) = 0.18 w n exceptional dv/dt capability n 100% avalanche tested n low gate charge n application oriented characterizationl description this power mosfet is the latest development of stmicroelectronics unique osingle feature size ? o strip-based process. the resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. applications n motor control n dc-dc & dc-ac converters ? internal schematic diagram may 2000 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 60 v v dgr drain- gate voltage (r gs =20k w )60v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c12a i d drain current (continuous) at t c =100 o c8.4a i dm ( ? ) drain current (pulsed) 48 a p tot total dissipation at t c =25 o c60w derating factor 0.4 w/ o c dv/dt peak diode recovery voltage slope 6 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 12 a, di/dt 300 a/ m s, v dd v (br)dss ,t j t jmax note: for the p-channel mosfet actual polarity of voltages and current has to be reversed type v dss r ds(o n) i d stP12PF06 60 v < 0.20 w 12 a 1 2 3 to-220 1/8
thermal data r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 2.5 62.5 0.5 275 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 12 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =25v) 200 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 60 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c = 125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a23.44v r ds(on) static drain-source on resistance v gs =10v i d = 6 a 0.18 0.20 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 12 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(o n) xr ds(on )ma x i d =6a 2.5 6 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 850 230 75 pf pf pf stP12PF06 2/8
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =30v i d =6a r g =4.7 w v gs =10v (resistive load, see fig. 3) 20 40 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =48v i d =12a v gs =10v 16 4 6 21 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd =30v i d =6a r g =4.7 w v gs =10v (resistive load, see fig. 3) 40 10 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =48v i d =12a r g =4.7 w v gs =10v (inductive load, see fig. 5) 10 17 30 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 10 40 a a v sd ( * )forwardonvoltage i sd =12a v gs =0 2.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a di/dt = 100 a/ m s v dd =30v t j =150 o c (see test circuit, fig. 5) 100 260 5.2 ns nc a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area thermal impedance stP12PF06 3/8
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations stP12PF06 4/8
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature stP12PF06 5/8
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times stP12PF06 6/8
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c stP12PF06 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com stP12PF06 8/8
|
